Nearly-diffraction limited 980nm tapered diode lasers with an output power of 6.7 W

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2004, Pages 43-44

  Paschke, K ^a   Sumpf, B ^a   Dittmar, F ^a   Erbert, G ^a   Fricke, J ^a   Knauer, A ^a   Schwertfeger, S ^a   Wenzel, H ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

BEAM QUALITY; METAL-ORGANIC CHEMICAL VAPOR EPITAXY (MOVPE); RIDGE WAVEGUIDES (RW); SUPER LARGE OPTICAL CAVITY (SLOC);

SEMICONDUCTOR LASERS;

EID: 17044430175     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Optical and Quantum Electronics, vol. 28, 623-645, 1996
2. B. Sumpf, R. Hülsewede, G. Erbert, C. Dzionk, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, G. Tränkle, "High-brightness 735-nm tapered diode lasers," Electronics Letters, vol. 38, 183-184, 2002
3. G. Erbert, J. Fricke, R. Hülsewede, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, B. Sumpf, H. Wenzel, G. Tränkle, "3 W - high brightness tapered diode lasers at 735nm based on tensile strained GaAsP-QWs" in Proceedings of SPIE, vol. 4995 Novel In-Plane Semiconductor Lasers II edited by Claire F. Gmachl, David P. Bour. (SPIE, Bellingham, WA, 2003), 29-38.
4. D. Mehuys, S. O'Brien, R.J. Lang, A.A. Hardy, and D.F. Welch, "5 W diffraction-limited, tapered-stripe unstable resonator semiconductor laser," Electronics Letters, vol. 30, 1885-1856, 1994
5. B. Sumpf, R. Hülsewede. G. Erbert, C. Dzionk, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, G. Tränkle, "High-brightness 735 nm tapered lasers - optimisation of the laser geometry" Optical and Quantum Electronics, vol 35, 521-532, 2003