In situ B doping of SiGe(C) using BCl 3 in ultraclean hot-wall LPCVD

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 68-72

  Kunii, Yasuo ^a   Inokuchi, Yasuhiro ^a   Moriya, Atsushi ^a   Kurokawa, Harushige ^a   Murota, Junichi ^b  

^a HITACHI KOKUSAI ELECTRIC INC   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Boron; CVD; Doping; Epitaxy

Indexed keywords

BORON; BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DETERIORATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS;

BCL3; DOPANTS; SHEET RESISTANCE; SIGE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142304538     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.089     Document Type: Conference Paper

References (2)

1. Y. Kunii, Y. Inokuchi, A. Moriya, J. Murota, in: Proceedings of the 1st International Workshop on New Group IV (Si-Ge-C), Paper number: IV-05, Sendai, 2001.
2. Moriya A., Sakuraba M., Matsuura T., Murota J. Thin Solid Films. 343-344:1999;541.