Ferroelectric properties of Bi3.25Nd0.75Ti 3O12 thin films prepared by MOD process

Journal of Electroceramics

Volumn 13, Issue 1-3, 2004, Pages 77-81

  Kim, Kibeom ^a   Jang, Guneik ^a   Kim, Changhoon ^b   Yoon, Daeho ^c  

^a Chungbuk National University   (South Korea)

^b CASE WESTERN RESERVE UNIVERSITY   (United States)

^c Sungkyunkwan University   (South Korea)

Author keywords

Bi4 x Nd x Ti3O 12 thin films; Dielectric constant; Fatigue; Ferroelectric; MOD method

Indexed keywords

ANNEALING; CAPACITANCE; FATIGUE OF MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC PROPERTIES; METAL ELECTRODES; METAL ORGANIC DEPOSITION (MOD); RANDOM ORIENTATION;

FERROELECTRIC THIN FILMS;

EID: 17044422157     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-004-5079-x     Document Type: Conference Paper

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