Luminescence of multilayer structures based on InAsSb at λ = 6-9 μm

Semiconductors

Volumn 39, Issue 2, 2005, Pages 214-217

  Zotova, N V ^a   Karandashev, S A ^a   Matveev, B A ^a   Remennyi M A ^a   Stus', N M ^a   Tarakanova, N G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 17044393434     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1864201     Document Type: Article

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