SrTiO3 based side gate field effect transistor realized by submicron scale AFM induced local chemical reactions

Journal of Electroceramics

Volumn 13, Issue 1-3, 2004, Pages 331-337

  Pellegrino, L ^a   Bellingeri, E ^a   Pallecchi, I ^a   Siri, A S ^a   Marre D ^a   Chincarini, A ^b  

^a UNIVERSITY OF GENOA   (Italy)

^b INFN SEZIONE DI GENOVA   (Italy)

Author keywords

Atomic force microscope patterning; Field effect; Side gate; Strontium titanate

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTIONS; DIELECTRIC MATERIALS; METAL INSULATOR TRANSITION; PARAMETER ESTIMATION; PERMITTIVITY; STRONTIUM COMPOUNDS; THIN FILMS;

ATOMIC FORCE MICROSCOPE PATTERNING; FIELD EFFECT; SIDE GATE; STRONTIUM TITANATE;

FIELD EFFECT TRANSISTORS;

EID: 17044376642     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-004-5122-y     Document Type: Conference Paper

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