Low-k dielectrics for dram frontend-of-line and mid-of-line

Proceedings - Electrochemical Society

Volumn 4, Issue , 2004, Pages 183-194

  Birner, A ^a   Klipp, A ^a   Mutnmler K ^a   Thies, A ^a   Weber, D ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; GLASS; RHEOLOGY; SEMICONDUCTOR DOPING; SILICATE MINERALS;

DIFFUSION BARRIER; HEMISPHERICAL GRAINED SILICON (HSG); INTER-METAL DIELECTRIC (IMD); PROCESS OF RECORDS (POR);

DIELECTRIC MATERIALS;

EID: 17044364368     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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