Ge & Ge+B infusion doping and deposition for ultra-shallow junction, blanket and localized SiGe or Ge formation on Cz and soi wafers

Proceedings - Electrochemical Society

Volumn 7, Issue , 2004, Pages 769-783

  Borland, John ^a   Hautala, John ^b   Tabat, Martin ^b   Gwinn, Matt ^b   Tetreault, Tom ^b   Skinner, Wes ^b  

^a JOB Technologies   (United States)

^b Epion Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL REGROWTH; GAS MIXTURES; SHALLOW JUNCTIONS; STRAIN RELAXATION;

CMOS INTEGRATED CIRCUITS; DEPOSITION; EPITAXIAL GROWTH; ETCHING; PHOTORESISTS; SEMICONDUCTOR DOPING; SILICON WAFERS; STRAIN;

SILICON ON INSULATOR TECHNOLOGY;

EID: 17044363621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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