Analysis of large impurity atmospheres at dislocations and associated point defect reactions in differently n-doped GaAs crystals

Journal de Physique III

Volumn 7, Issue 12, 1997, Pages 2339-2360

  Frigeri, C ^a   Weyher, J L ^b   Jimenez J ^c   Martin, P ^a  

^a CNR   (Italy)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); POINT DEFECTS; SEMICONDUCTOR DOPING; STOICHIOMETRY;

FREE ELECTRON CONCENTRATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031373427     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997263     Document Type: Article

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