Investigation of Semiconductors by Nanoindentation

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 519-524

  Richter, Asta ^a   Wolf, Bodo ^b   BelBruno, Joseph ^c  

^a TECHNICAL UNIVERSITY OF APPLIED SCIENCES WILDAU   (Germany)

^b Lausitz University of Applied Sciences   (Germany)

^c Dartmouth College   (United States)

Author keywords

Crystal Symmetry; Mechanical Hysteresis; Nanoindentation; Nanomechanical Properties; Phase Transitions; Scanning Force Microscopy; Semiconductors

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; ELECTROSTATIC DEVICES; HARDNESS TESTING; HYSTERESIS; INDENTATION; ION IMPLANTATION; MICROSCOPIC EXAMINATION; PHASE TRANSITIONS; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; STRESS CONCENTRATION;

MULTICYCLING NANOINDENTATION; SCANNING FORCE MICROSCOPY (SFM);

SEMICONDUCTING SILICON;

EID: 1642556983     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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