Hillock Formation of SnO2 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 11, 2003, Pages 7071-7072

  Park, Kyung Hee ^a   Ryu, Hyun Wook ^a   Seo, Yong Jin ^b   Lee, Woo Sun ^a   Hong, Kwang Jun ^a   Shin, Dong Charn ^a   Akbar, Sheikh A ^c   Park, Jin Seong ^a  

^a Chosun University   (South Korea)

^b Daebul University   (South Korea)

^c CISM   (United States)

Author keywords

Annealing treatment; Hillock formation; MOCVD; Thin films; Tin dioxide

Indexed keywords

AIR; ALUMINA; ANNEALING; BINDING ENERGY; FILM PREPARATION; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; QUARTZ; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE PROPERTIES; TIN COMPOUNDS;

CRYSTALLITES; HILLOCK FORMATION;

THIN FILMS;

EID: 1642495693     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7071     Document Type: Article

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