Improved electrical properties in nanocrystalline Si formed by metal induced growth

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 735-740

  Ji, Chunhai ^a   Anderson, Wayne A ^a  

^a State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GRAIN BOUNDARIES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PASSIVATION; PHOTODIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON; SINGLE CRYSTALS; SOLAR CELLS; THIN FILMS;

METAL INDUCED GROWTH (MIG); SURFACE POLISHING; THERMAL ENERGY;

NANOSTRUCTURED MATERIALS;

EID: 1642459327     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a17.11     Document Type: Conference Paper

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