Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5127, Issue , 2002, Pages 128-131

  Safonov, Kirill L ^a   Kulikov, Dmitri V ^b   Trushin, Yuri V ^a,b   Pezoldt, Jörg ^c  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Cluster growth; Molecular beam epitaxy; Rate equations

Indexed keywords

DIFFUSION; DIMERS; DISSOCIATION; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; PHASE TRANSITIONS; RATE CONSTANTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE REACTIONS;

ADATOMS; CLUSTER GROWTH; RATE EQUATIONS; SURFACE DENSITY; SURFACE DIFFUSION;

SILICON CARBIDE;

EID: 1642433312     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.517950     Document Type: Conference Paper

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