New Development Method Eliminating the Loading and Micro-Loading Effect

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 67-77

  Ooishi, Kotaro ^a   Esaki, Yukihiko ^a   Sakamoto, Kazuo ^a   Sakurai, Hideaki ^b   Itoh, Masamitsu ^b   Nakao, Mika ^c   Nishimura, Toshiharu ^c   Miyashita, Hiroyuki ^c   Hayashi, Naoya ^c   Tanabe, Shinji ^d   Oosaki, Yoshihisa ^d   Sasagawa, Yasuyoshi ^d  

^a TOKYO ELECTRON LTD   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c DAI NIPPON PRINTING CO LTD   (Japan)

^d DT Fine Electron Co Ltd (Japan)   (Japan)

Author keywords

CD uniformity; Loading effect; Pattern density; PGSD

Indexed keywords

CD UNIFORMITY; LOADING EFFECTS; PATTERN DENSITY; PROXIMITY GAP SUCTION DEVELOPMENT (PGSD);

ADHESION; DIMENSIONAL STABILITY; DISSOLUTION; LOADING; NOZZLES; RADIATION COUNTERS; REDUCTION; SENSORS; SPRAYING;

MASKS;

EID: 1642433156     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504050     Document Type: Conference Paper

References (2)

1. M. Itoh et al.,"Novel Resist Development System for Photomasks", Proc. SPIE 4889,pp.746-753, 2002.
2. H. Sakurai et al.,"Performance of Proximity Gap Suction Development (PGSD)", Proc. SPIE, 4889,pp.737-745, 2002.