A new, closed-form compact model for the cyclostationary noise and LS conversion behaviour of RF junction diodes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 137-140

  Bonani, F ^a   Guerrieri, S Donati ^a   Ghione, G ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CORRELATION METHODS; ELECTRIC RESISTANCE; FREQUENCY MULTIPLYING CIRCUITS; GREEN'S FUNCTION; MATRIX ALGEBRA; MICROWAVE DEVICES; MIXER CIRCUITS; SIGNAL PROCESSING; SPURIOUS SIGNAL NOISE;

CYCLOSTATIONARY NOISE;

SEMICONDUCTOR DIODES;

EID: 0036931280     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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3. S. Sze, Physics of semiconductor devices, Wiley: New York, 1981.
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5. F. Bonani, G. Ghione, Noise in semiconductor devices. Modeling and simulation, Springer Verlag: Heidelberg, 2001
6. R. B. Darling, IEEE Trans. El. Dev., pp. 969-976, 1995.
7. F. Bonani, S. Donati Guerrieri, G. Ghione, M. Pirola, IEEE Trans. El. Dev., pp. 966-977, May 2001.