Numerical analysis of the relaxation of photoexcited carriers and the hot-phonon effect in GaN

Journal of Luminescence

Volumn 106, Issue 3-4, 2004, Pages 253-261

  Silva, A A P ^a   Nascimento, V A ^a  

^a FEDERAL UNIVERSITY OF MATO GROSSO DO SUL   (Brazil)

Author keywords

Hot carriers; Hot phonons; Quasitemperature; Ultrafast relaxation

Indexed keywords

CRYSTAL LATTICES; GALLIUM NITRIDE; HOT CARRIERS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; QUANTUM THEORY; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

HOT PHONONS; QUASITEMPERATURE; ULTRAFAST RELAXATION;

PHONONS;

EID: 1642386271     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2003.11.002     Document Type: Article

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