Conductance anisotropy of high-mobility two-dimensional hole gas at GaAs/(Al,Ga)As(1 1 3)A single heterojunctions

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 737-741

  Hey, R ^a   Friedland, K J ^a   Kostial, H ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Anisotropic magnetotransport; High mobility two dimensional hole gas; Surface corrugation

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; FERMI LEVEL; HETEROJUNCTIONS; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SURFACE ROUGHNESS;

ANISOTROPIC MAGNETOTRANSPORT; HIGH MOBILITY TWO DIMENSIONAL HOLE GAS; SURFACE CORRUGATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1642361185     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.115     Document Type: Conference Paper

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