Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 642-645

  Friedland, K J ^a   Hey, R ^a   Bierwagen, O ^b   Kostial, H ^a   Hirayama, Y ^c   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Anisotropic magnetotransport; High mobility two dimensional electrons

Indexed keywords

ANISOTROPY; ELECTRON MOBILITY; ELECTRON SCATTERING; MAGNETORESISTANCE; MODULATION; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

ANISOTROPIC MAGNETOTRANSPORT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036492838     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00207-2     Document Type: Article

References (11)