Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 399-403

  Aslan, B ^a,b   Turan, R ^a   Liu, H C ^b   Baribeau, J M ^b  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION INTERNAL PHOTOEMISSION; INFRARED PHOTODETECTORS; PHOTOCURRENT GENERATION; SILICON GERMANIDE;

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTOCURRENTS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; ULTRAHIGH VACUUM;

INFRARED DETECTORS;

EID: 1642355143     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/018     Document Type: Article

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