Voltage tunable SiGe photodetector: A novel tool for crypted optical communications through wavelength mixing

Applied Physics Letters

Volumn 70, Issue 24, 1997, Pages 3194-3196

  Masini, G ^a   Colace, L ^a   Galluzzi, F ^a   Assanto, G ^a   Pearsall, T P ^b   Presting, H ^c  

^a ROMA TRE UNIVERSITY   (Italy)

^b University of Washington   (United States)

^c DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; OPTICAL COMMUNICATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SHORT CIRCUIT CURRENTS; SIGNAL TO NOISE RATIO;

BANDGAP ENGINEERING; DOUBLE BACKWARD DIODE; PHOTOCURRENTS;

PHOTODETECTORS;

EID: 0031165777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119155     Document Type: Article

References (8)

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4. Y. Zhang, D. S. Jiang, and W. K. Ge, Appl. Phys. Lett. 68, 2114 (1996).
5. C. Bean, Proc. IEEE 80, 571 (1992).
6. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
7. E. D. Palik, Handbook of Optical Constants of Solids (Academic, Orlando, FL, 1991).
8. T. P. Pearsall, H. Polatoglou, H. Presting, and E. Kasper, Phys. Rev. B 54, 1545 (1996).