Fullerene freejets-based synthesis of silicon carbide: Heteroepitaxial growth on Si(111) at low temperatures

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 169-173

  Aversa, L ^a   Verucchi, R ^a   Boschetti, A ^a   Podesta A ^b   Milani, P ^b   Iannotta, S ^a  

^a CNR   (Italy)

^b UNIVERSITY OF MILAN   (Italy)

Author keywords

Film deposition; Molecular beam epitaxy; Silicon; Silicon carbide

Indexed keywords

AGGLOMERATION; EPITAXIAL GROWTH; FULLERENES; KINETIC ENERGY; MOLECULAR BEAM EPITAXY; SENSORS; SUBSTRATES; SYNTHESIS (CHEMICAL); THIN FILMS;

FILM DEPOSITION; FULLERENE BEAMS;

SILICON CARBIDE;

EID: 1642341593     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00703-1     Document Type: Conference Paper

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