Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering

Thin Solid Films

Volumn 445, Issue 2, 2003, Pages 245-250

  Hoshi, Yoichi ^a   Kato, Hiro Omi ^a   Funatsu, Kentaro ^a  

^a TOKYO POLYTECHNIC UNIVERSITY   (Japan)

Author keywords

High rate deposition; Indium tin oxide; Low temperature deposition; Sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; DEPOSITION; ELECTRIC CONDUCTIVITY; GLASS; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; OXYGEN; PLASTIC FILMS; POLYCARBONATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HIGH RATE DEPOSITION; INDIUM TIN OXIDES (ITO); LOW TEMPERATURE DEPOSITION;

THIN FILMS;

EID: 1642332134     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01182-9     Document Type: Conference Paper

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