A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 537-542

  Cojocari, O ^a   Mottet, B ^a   Rodriguez Girones, M ^a   Biber, S ^b   Marchand, L ^c   Schmidt, L P ^b   Hartnagel, H L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANODE FORMATION PROCESS; AUXILIARY HONEYCOMB ARRAY; SCHOTTKY-METAL DEPOSITION; SUB-MICROMETER ANODE METALLIZATION; WHISKER-CONTACTED DIODES;

ANODES; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODEPOSITION; METALLIZING; SEMICONDUCTING GALLIUM ARSENIDE;

SCHOTTKY BARRIER DIODES;

EID: 1642316184     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/045     Document Type: Article

References (17)

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