Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs schottky diode interfaces

IEEE Electron Device Letters

Volumn 21, Issue 11, 2000, Pages 515-517

  Miranda, J M ^a   Lin, C I ^b   Brandt, M ^c   Rodriguez Girones M ^b   Hartnagel, H L ^b   Sebastian J L ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HEAT TREATMENT; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; TEMPERATURE MEASUREMENT;

METAL SEMICONDUCTOR INTERFACE; MICROWAVE NOISE; SEMICONDUCTOR DEVICE NOISE;

SCHOTTKY BARRIER DIODES;

EID: 0034317926     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.877194     Document Type: Article

References (12)

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