Process control and failure analysis implementation for THz Schottky-based components

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1593-1596

  Ichizli, V ^a,c   Rodriguez Girones M ^a   Marchand, L ^b   Garden, C ^b   Cojocari, O ^a   Mottet, B ^a   Hartnagel, H L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b EUROPEAN SPACE AGENCY   (Netherlands)

^c Radiometer Physics GmbH (RPG)   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; INTEGRATED CIRCUITS; MULTIPLYING CIRCUITS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES;

DEVICE RELIABILITY; FABRICATION PROCESS; FAILURE MECHANISM; FREQUENCY MIXING; HIGH FREQUENCY SEMICONDUCTOR DEVICES; OPERATIONAL FREQUENCY; PROCESS REPEATABILITY; REPRODUCIBILITIES;

MIXER CIRCUITS;

EID: 1642343972     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00196-8     Document Type: Conference Paper

References (7)

1. th Int. Conf. THz Electronics, Sept. 2000, Damrstadt, Germany, 129-132.
2. Marshall E D and Murakami M. In: Brillson L J (Ed.) Contacts to Semiconductors (Fundamentals and Technology) Noyes Publications, 1993, pp 1-66.
3. Hartnagel H L and Lin C-I. Proc. Int. Seminar on Semicon. Surf. Passivation, Ustron, Poland, Sept. 1999.
4. Miranda J M, Lin C-I, Brandt M, Rodriguez-Girones M, and Hartnagel H L, Sebastian J L. IEEE Electron Device Letters, 21 (11) (2000) 515-517.
5. th Int. Conf. Terahertz Electronics, Charlottesville, VA, USA October 2001.
6. Jean C A St, Bishop W L Jr., Sarpong B K, Marazita S M, and Crowe T W, IEEE Transactions on Electron Devices, 47 (7) (2000) 1465-1468.
7. th Int. Symp. Space Terahertz Tech., Los Angeles, CA, USA, 1993, pp 392-403.