Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 308-311

  Ohdaira, K ^a,c   Murata, H ^b   Koh, S ^a   Baba, M ^a   Akiyama, H ^a   Ito, R ^b   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b MEIJI UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Indirect; Quantum dot; Time resolved photoluminescence; Type II

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS;

PHOTOLUMINESCENCE PEAK SHIFTS; TIME-RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642307512     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.018     Document Type: Conference Paper

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