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Volumn 19, Issue 3, 2004, Pages 475-479
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Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices
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Author keywords
[No Author keywords available]
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Indexed keywords
THERMAL ACTIVATION ENERGY;
THERMAL QUENCHING;
DEFORMATION;
EXCITONS;
PHOTOLUMINESCENCE;
QUENCHING;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
X RAY DIFFRACTION ANALYSIS;
SEMICONDUCTOR SUPERLATTICES;
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EID: 1642280304
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/19/3/033 Document Type: Article |
Times cited : (2)
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References (11)
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