Optical properties of type II short-period GaAs/AlAs superlattices under stress effects

Microelectronics Journal

Volumn 30, Issue 7, 1999, Pages 631-636

  Smaoui, F ^a   Maaref, M ^a   Planel, R ^b  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL SYMMETRY; ELECTRIC CONDUCTIVITY; GROUND STATE; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; STRESSES; SUBSTRATES;

LATTICE MISMATCH; OPTICAL TRANSITIONS; VALENCE BAND STRUCTURES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032642378     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00003-8     Document Type: Article

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