Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness

Applied Physics Letters

Volumn 74, Issue 18, 1999, Pages 2596-2598

  Krylyuk, S ^a   Korbutyak, D V ^a   Litovchenko, V G ^a   Hey, R ^b   Grahn, H T ^b   Ploog, K H ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; LIGHT EMITTING DIODES; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BARRIER THICKNESS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032622126     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123908     Document Type: Article

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