Model and design rules for eliminating surface potential induced failures in high voltage integrated circuits

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1267-1272

  Van Der Pol, Jacob A ^a   Rongen, R T H ^a   Bruggers, H J ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 16344389340     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00122-0     Document Type: Article

References (6)

1. H.J. Bruggers, R.T.H. Rongen, C.P. Meeuwsen, A.W. Ludikhuize, 'Reliability problems due to ionic conductivity of IC encapsulation materials under high voltage conditions', Proceedings International Symposium on Power Semiconductor Devices (ISPSD), pp. 197-200, (1999)
2. J.A. van der Pol, H.J. Gerritsen, R.T.H. Rongen, P.P.M.C. Groeneveld, P.W. Ragay, H.A. van den Hurk, 'Reliability issues in 650V high voltage Bipolar-CMOS-DMOS integrated circuits', Microelectronics & Reliability, pp. 1723-1726, (1997)
3. J.A. van der Pol, 'New methods for building-in and improvement of integrated circuit reliability - Application to high volume semiconductor manufacturing', Thesis, University of Twente, Netherlands, (2000)
4. R.D. Mosbarger, D.J. Hickey, "The effects of materials and post-mold profiles on plastic encapsulated integrated circuits", Proceedings IRPS 1994, pp. 93-100, (1994)
5. J. Frenkel, 'On pre-breakdown phenomena in insulators and electronic semiconductors', Physical Review, pp. 647, (1938)
6. S.M. Sze, 'Physics of semiconductor devices', 2nd edition, John Wiley & Sons, New York, (1981)