Reliability issues in 650V high voltage bipolar-CMOS-DMOS integrated circuits

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1723-1726

  Van Der Pol, Jacob A ^a   Gerritsen, Han J ^a   Rongen, Rene T H ^a   Groeneveld, Peter P M C ^a   Ragay, Peter W ^a   Van Den Hurk, Henk A ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; FAILURE ANALYSIS; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; RELIABILITY; SODIUM; TEMPERATURE;

DMOS TRANSISTOR; HIGH VOLTAGE DEVICES; LOW VOLTAGE DEVICES; THRESHOLD VOLTAGE INSTABILITIES;

MOSFET DEVICES;

EID: 0031247683     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00148-0     Document Type: Article

References (6)

1. T. Fujihara, Y. Yano, S. Obinata, N. Kumagai, K. Sakurai, "Proposal for new interconnection technique for very high-voltage IC's", J. Appl. Phys., Vol. 35, pp. 5655-5663, (1996)
2. R.L. Hance, J.W. Miller, K. Erington, M.A. Chonko, "Mobile ion contamination in CMOS circuits", IRPS Tutorial, Topic 4, (1995)
3. R.D. Mosbarger, D.J. Hickey, "The effects of materials and post-mold profiles on plastic encapsulated integrated circuits", Proc. IRPS 1994, pp. 93-100, (1994)
4. P.L. Hefley, J.W. McPherson, "The impact of an external sodium diffusion source on the reliability of MOS circuitry", Proc. IRPS, pp. 167-
5. C. Hong, B. Henson, T. Scelsi, R. Hance, "An accelerated sodium resistance test for IC passivation films", Proc. IRPS, pp. 318-325, (1995)
6. R. McClelland, "Generic leakage plastic - recoverable, code B7a", Philip Semiconductors Failure Analysis Handbook, (1995)