Reliability problems due to ionic conductivity of IC encapsulation materials under high voltage conditions

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 197-200

  Bruggers, H J ^a   Rongen, R T H ^a   Meeuwsen, C P ^a   Ludikhuize, A W ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELDS; ENCAPSULATION; HIGH TEMPERATURE OPERATIONS; IONIC CONDUCTION; LEAKAGE CURRENTS; NITRIDES; PASSIVATION; RELIABILITY;

CHARGE ACCUMULATION; CHARGE CREEP; ELECTROTHERMALLY INDUCED LEAKAGE; GATELESS NMOST STRUCTURES; HIGH VOLTAGE INTEGRATED CIRCUITS; NITRIDE PASSIVATION LAYER;

INTEGRATED CIRCUITS;

EID: 0032598914     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)