Generation of submillimeter-wave radiation with GaAs tunnett Diodes and InP gunn devices in a second or higher harmonic mode

International Journal of Infrared and Millimeter Waves

Volumn 26, Issue 1, 2005, Pages 1-14

  Eisele, H ^a   Naftaly, M ^a   Kamoua, R ^b  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b STONY BROOK UNIVERSITY   (United States)

Author keywords

Gunn devices; Harmonic generation; Millimeter wave devices; Millimeter wave generation; Millimeter wave oscillators; Oscillator noise; Phase noise; Submillimeter wave devices; Submillimeter wave generation; Submillimeter wave oscillators

Indexed keywords

ABSORPTION SPECTROSCOPY; AVALANCHE DIODES; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GUNN DEVICES; HARMONIC GENERATION; MILLIMETER WAVE DEVICES; MIRRORS; OPTICAL BEAM SPLITTERS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; SPECTROMETERS; SPECTRUM ANALYZERS; TUNNEL DIODES;

MILLIMETER-WAVE GENERATION; MILLIMETER-WAVE OSCILLATORS; OSCILLATOR NOISE; PHASE NOISE; SUBMILLIMETER-WAVE DEVICES; SUBMILLIMETER-WAVE GENERATION; SUBMILLIMETER-WAVE OSCILLATORS; TRANSIT-TIME DIODES;

SUBMILLIMETER WAVES;

EID: 16244372112     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10762-004-2027-4     Document Type: Article

References (21)

1. P. Siegel, "Terahertz technology," IEEE Trans. Microwave Theory Tech., vol. 50, no. 3, pp. 910-928, March 2002.
2. P. Plotka, J-i. Nishizawa, T. Knrabayashi, and H. Makabe, "240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy," IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 867-873, April 2003.
3. th Int. Conf. Terahertz Electronics, Sendai, Japan, Sept. 24-26, 2003, p. 38.
4. H. Eisele and R. Kamoua, "Gunn Devices as Compact Low-Noise High-Performance Submillimeter-Wave Sources: Current Status and Future Potential," 3rd ESA Workshop on Millimetre Wave Technology and Applications, Espoo, Finland, May 21-23, 2003, pp. 149-154.
5. H. Eisele, A. Rydberg, and G. I. Haddad, "Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above," IEEE Trans. Microwave Theory Techniques, vol. 48, no. 4, pp. 626-631, April 2000.
6. M. Ohmori, T. Ishibashi, and S. Ono, "Dependency of the highest harmonic oscillation frequency on junction diameter of IMPATT diodes," IEEE Trans. Electron Devices, vol. 24, no. 12, 1977, pp. 1323-1329, Dec. 1977.
7. H. Barth and W. Menzel, "GaAs Gunn oscillators reach the 140-GHz range," 1985 IEEE MTT-S Digest, pp. 367-369, June 1985.
8. A. Rydberg, "High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz," IEEE Electron Device Lett., vol. 11, no. 10, pp. 439-441, Oct 1990.
9. E. Schomburg, M. Henini, J. M. Chamberlain, P. Steenson, S. Brandl, K. Hofbeck, K. F. Renk, and W. Wegscheider, "Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice," Appl. Phys. Lett., vol. 74, no. 15, pp. 2179-2181, April 1999.
10. E. Schomburg, R. Scheuerer, S. Brandl, K. F. Renk, D. G. Pavel'ev, Yu. Koschurinov, V. Ustinov, A. Zhukov, A. Kovsh, and P. S. Kop'ev, "An InGaAs/InAlAs superlattice oscillator at 147 GHz," Electron. Lett. vol. 35, no. 17, pp. 1491-1492, 1999.
11. E. Schomburg, J. Grenzer, K. Hofbeck, T. Blomeier, S. Winnerl, S. Brandl, A. A. Ignatov, K. F. Renk, D. G. Pavel'ev, Yu, Koschurinov, V. Ustinov, A. Zhukov, A. Kovsch, S. Ivanov, and P. S. Kop'ev, "Millimeter wave generation with a quasi planar superlattice electronic device," Solid-State Electron., vol. 42, no. 7-8, pp. 1495-1498, 1998.
12. th Int. Symp. Space Terahertz Technology, Northampton, MA, April 27-29, 2004.
13. M. R. Stone, M. Naftaly, R. E. Miles, J. R. Fletcher, and D. P. Steenson, "Electrical and radiation characteristics of semi-large photoconductive terahertz emitters," IEEE Trans. Microwave Theory Techniques, vol. 52, no. 10, pp. 2420-2429, Oct. 2004.
14. H. Eisele, "Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz," Electron. Lett., vol. 34, no. 13, pp. 1324-1326, 1998.
15. H. Eisele, "Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz," Electron. Lett., vol. 34, no. 15, p. 1531, 1998.
16. N. Erickson, "A fast and sensitive submillimeter waveguide power meter," Proc. Wth Int. Symp. Space Terahertz Technology, Charlottesville, VA, March 16-19, 1999, pp. 501-507.
17. R. Kamoua, H. Eisele, and G. L Haddad, "O-band (110-170 GHz) InP Gunn devices," Solid-State Electron., vol. 36, no. 11, pp. 1547-1555, 1993.
18. H. Eisele and R. Kamoua, "Subnrillimeter-wave InP Gunn devices," IEEE Trans. Microwave Theory Techniques, vol. 52, no. 10, pp. 2371-2378, Oct 2004.
19. R. Kamoua, "Monte Carlo-based harmonic balance technique for the simulation of high-frequency TED oscillators," IEEE Trans. Microwave Theory Tech., vol. 46, no. 10, pp. 1376-1381, Oct. 1998.
20. C. Kidner, H. Eisele, and G. I. Haddad, "Tunnel injection transit-time diodes for FT-band power generation," Electron. Lett., vol. 28, no. 5, pp. 511-513, 1992.
21. H. Eisele and G. I. Haddad, "Active Microwave Diodes," in Modern Semiconductor Devices, S. M. Sze, Ed., Ch. 6, John Wiley & Sons, New York, 1997, pp. 343-407.