Electrical and radiation characteristics of semilarge photoconductive terahertz emitters

IEEE Transactions on Microwave Theory and Techniques

Volumn 52, Issue 10, 2004, Pages 2420-2429

  Stone, Michael R ^a   Naftaly, Mira ^a   Miles, Robert E ^a   Fletcher, John R ^a   Steenson, David Paul ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Interferometer; Low temperature (LT) grown GaAs; Photoconductive emitter; Terahertz

Indexed keywords

ELECTROMAGNETIC WAVES; ELECTRON MOBILITY; FABRICATION; FREQUENCIES; INTERFEROMETERS; LIGHT SOURCES; LOW TEMPERATURE EFFECTS; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

LASER POWER; LOW TEMPERATURE (LT) GROWN GAAS; PHOTOCONDUCTIVE EMITTERS; TERAHERTZ;

PHOTOCONDUCTING MATERIALS;

EID: 6944233627     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.835980     Document Type: Article

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