Mobility enhancement of SSOI devices fabricated with sacrificial thin relaxed SiGe

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 139-140

  Lee, J J ^a   Maa, J S ^a   Tweet, D J ^a   Hsu, S T ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; FABRICATION; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN; SUBSTRATES; TENSILE STRENGTH; THERMODYNAMIC STABILITY;

SSOI WAFERS; STRAIN RELAXATION; VIRTUAL SUBSTRATES; WAFER BONDING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 16244368747     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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