MOVPE growth of ternary and quaternary tensile strained MQW structures for polarization insensitive devices

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 117-121

  Wiedemann, P ^a   Laube, G ^a   Weber, J ^a   Lach, E ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

OPTICAL WAVELENGTH CONVERTERS; POLARIZATION INSENSITIVE DEVICES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030698946     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00542-8     Document Type: Article

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