Nucleation and growth of δ-Bi2O3 thin films on c-sapphire by means of chemical vapour deposition under atmospheric pressure

Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 485-489

  Takeyama, T ^a   Takahashi, N ^a   Nakamura, T ^a   Itoh, S ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b ASAHI GLASS CO LTD   (Japan)

Author keywords

A1. Crystal morphology; A1. Growth model; A3. Chemical vapour deposition processes; B1. Bismuth compounds; B1. Oxide

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; MATHEMATICAL MODELS; MORPHOLOGY; NUCLEATION; OXIDES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CHEMICAL VAPOR DEPOSITION PROCESSES; CRYSTAL MORPHOLOGY; GROWTH MODEL; GROWTH TEMPERATURE; SAPPHIRE SUBSTRATES;

BISMUTH COMPOUNDS;

EID: 15944373848     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.009     Document Type: Article

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