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Volumn 244, Issue 1-4, 2005, Pages 30-33
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Tight-binding quantum chemical molecular dynamics simulation of boron activation process in crystalline silicon
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Author keywords
Boron activation; Crystalline silicon; Lattice vacancy; Tight binding quantum chemical molecular dynamics
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Indexed keywords
BORON;
COMPUTER SIMULATION;
CRYSTAL LATTICES;
CRYSTAL STRUCTURE;
DOPING (ADDITIVES);
ELECTRON TRANSITIONS;
SILICON;
BORON ACTIVATION;
CRYSTALLINE SILICON;
LATTICE VACANCY;
TIGHT-BONDING QUANTUM CHEMICAL MOLECULAR DYNAMICS;
MOLECULAR DYNAMICS;
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EID: 15844427652
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.10.062 Document Type: Conference Paper |
Times cited : (2)
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References (5)
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