Tight-binding quantum chemical molecular dynamics simulation of boron activation process in crystalline silicon

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 30-33

  Masuda, Tsuyoshi ^a   Sasata, Katsumi ^a   Elanany, Mohamed ^a   Koyama, Michihisa ^a   Kubo, Momoji ^a,b   Miyamoto, Akira ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Boron activation; Crystalline silicon; Lattice vacancy; Tight binding quantum chemical molecular dynamics

Indexed keywords

BORON; COMPUTER SIMULATION; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRON TRANSITIONS; SILICON;

BORON ACTIVATION; CRYSTALLINE SILICON; LATTICE VACANCY; TIGHT-BONDING QUANTUM CHEMICAL MOLECULAR DYNAMICS;

MOLECULAR DYNAMICS;

EID: 15844427652     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.062     Document Type: Conference Paper

References (5)

1. A.E. Michel, W. Rausch, P.A. Ronsheim, and R.H. Kastl Appl. Phys. Lett. 50 1987 416
2. M. Sosnowski, M.A. Albano, C. Li, H.J.L. Gossmann, and D.C. Jacobson J. Electrochem. Soc. 149 2002 G474
3. S. Whelan, A. La Magna, V. Privitera, G. Mannino, M. Italia, C. Bongiorno, G. Fortunato, and L. Mariucci Phys. Rev. B 67 2003 075201
4. E.N. Shauly, and S. Lachman-Shalem J. Vac. Sci. Technol. B 22 2004 592
5. M. Elanany, P. Selvam, T. Yokosuka, S. Takami, M. Kubo, A. Imamura, and A. Miyamoto J. Phys. Chem. B 107 2003 1518