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Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

A method for an accurate determination of stoichiometric deviations in CdTe and CdZnTe bulk crystals

(6) Zappettini, A a Waldner, R a Bissoli, F a Zha, M a Zanotti, L a Paorici, C b

a IMEM CNR (Italy)

b INFM (Italy)

Author keywords

A1. Characterization; A1. Phase equilibria; B2. Semiconducting II VI materials

Indexed keywords

CHARACTERIZATION; CRYSTAL GROWTH; DATA ACQUISITION; ENERGY DISPERSIVE SPECTROSCOPY; PHASE DIAGRAMS; PHASE EQUILIBRIA; POINT DEFECTS; POLYCRYSTALLINE MATERIALS; STOICHIOMETRY;

MATERIAL STOICHIOMETRY; SEMICONDUCTING II-VI MATERIALS; STOICHIOMETRY DEFECT;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 15844370513 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.064 Document Type: Conference Paper

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.