Stoichiometric deviations and partial-pressure measurements in solid-vapour cadmium telluride system

Materials Chemistry and Physics

Volumn 66, Issue 2, 2000, Pages 138-142

  Zappettini, A ^a   Bissoli, F ^b   Zanotti, L ^b   Zha, M ^b   Broglia, C ^c   Paorici, C ^c  

^a 20131 ^*  (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTROOPTICAL EFFECTS; LIGHT ABSORPTION; PARTIAL PRESSURE; PHOTOREFRACTIVE MATERIALS; PRESSURE MEASUREMENT; SINGLE CRYSTALS; STOICHIOMETRY; THERMAL EFFECTS; TRANSPORT PROPERTIES;

PHYSICAL VAPOR TRANSPORT GROWTH; SOLID-VAPOR CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0034299910     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00334-5     Document Type: Article

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