Epitaxial growth of W-doped VO2/V2O3 multilayer on α-Al2O3(110) by reactive magnetron sputtering

Thin Solid Films

Volumn 375, Issue 1-2, 2000, Pages 128-131

  Jin, P ^a   Tazawa, M ^a   Yoshimura, K ^a   Igarashi, K ^a   Tanemura, S ^a   MacAk K ^b   Helmersson, U ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL ORIENTATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; FILM GROWTH; MAGNETRON SPUTTERING; MULTILAYERS; TUNGSTEN; VANADIUM COMPOUNDS;

REACTIVE MAGNETRON SPUTTERING;

METALLIC FILMS;

EID: 0342538894     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01226-8     Document Type: Article

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