Bridgman growth of concentrated GaInSb alloys with improved compositional uniformity under alternating magnetic fields

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Stelian, Carmen ^a,b   Delannoy, Yves ^b   Fautrelle, Yves ^b   Duffar, Thierry ^b  

^a WEST UNIVERSITY OF TIMISOARA   (Romania)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

A1. Computer simulation; A1. Directional solidification; A1. Magnetic fields; A1. Segregation; A2. Bridgman technique; B2. Semiconducting III V materials

Indexed keywords

ANTIMONY ALLOYS; COMPUTER SIMULATION; ELECTROMAGNETISM; INDIUM ALLOYS; MAGNETIC FIELD EFFECTS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SOLIDIFICATION;

BRIDGMAN TECHNIQUES; INTERFACE CURVATURES; MELT CONVECTION; SEMICONDUCTING III-V MATERIALS;

GALLIUM ALLOYS;

EID: 15844368042     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.222     Document Type: Conference Paper

References (6)

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2. N. Duhanian, et al., Experimental study of the solid-liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth, J. Crystal Growth, in press.
3. T. Duffar, C. Stelian, A. Mitric, Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing, Hannover, 2003, pp. 79-84.
4. C. Stelian, and T. Duffar J. Crystal Growth 266 2004 190
5. C. Stelian, Y. Delannoy, Y. Fautrelle, and T. Duffar J. Crystal Growth 266 2004 207
6. C. Stelian, T. Duffar, Numerical analysis of solute distribution and interface stabilization during experimental Bridgman growth of concentrated GaInSb alloys, J. Crystal Growth, in press.