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Volumn 275, Issue 1-2, 2005, Pages

Numerical analysis of solute distribution and interface stabilization during experimental Bridgman growth of concentrated GaInSb alloys

(2) Stelian, Carmen a,b Duffar, Thierry b

a WEST UNIVERSITY OF TIMISOARA (Romania)

b Centre National de la Recherche Scientifique (France)

Author keywords

A1. Computer simulation; A1. Segregation; A2. Bridgman technique; B2. Semiconducting III V materials

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; MASS TRANSFER; MATHEMATICAL MODELS; MORPHOLOGY; NUMERICAL ANALYSIS; PHASE INTERFACES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR MATERIALS; SOLIDIFICATION;

BRIDGMAN TECHNIQUE; INTERFACE DEFLECTION; SEMICONDUCTING III-V MATERIALS; SOLUTE;

GALLIUM ALLOYS;

EID: 15844416863 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.002 Document Type: Conference Paper

Times cited : (22)

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