Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep level transient spectroscopy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5530, Issue , 2004, Pages 251-259

  Meneghesso, Gaudenzio ^a   Meneghini, Matteo ^a   Levada, Simone ^a   Zanoni, Enrico ^a   Cavallini, Anna ^b   Castaldini, Antonio ^b   Härle, Volker ^c   Zahner, Thomas ^c   Zehnder, Ulrich ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Capacitance voltage; DLTS; Gallium nitride; LED; Low current degradation

Indexed keywords

ADHESIVES; CAPACITANCE MEASUREMENT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEGRADATION; ELECTROLUMINESCENCE; EPOXY RESINS; GALLIUM NITRIDE; SEMICONDUCTING INDIUM COMPOUNDS; VISIBILITY; VOLTAGE MEASUREMENT;

CAPACITANCE-VOLTAGE MEASUREMENTS; EPOXY ADHESIVE; LOW CURRENT DEGRADATION; LUMEN MAINTENANCE;

LIGHT EMITTING DIODES;

EID: 15744402757     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.566159     Document Type: Conference Paper

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