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Volumn 11, Issue 12, 1999, Pages 3430-3432

Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S2CNMeHex)3, by low-pressure metal-organic chemical vapor deposition

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[No Author keywords available]

Indexed keywords


EID: 0000181088     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm9905040     Document Type: Article
Times cited : (46)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.