GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics

Electronics Letters

Volumn 36, Issue 3, 2000, Pages 264-265

  Mochizuki, K ^a,b   Welty, R J ^a   Asbeck, P M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; OHMIC CONTACTS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

BASE COLLECTOR JUNCTION; ELECTRON FLOW;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034598687     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000211     Document Type: Article

References (8)

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