Evidence of strong phonon-assisted resonant intervalley up-transfer for electrons in type-II GaAs-AlAs superlattices

IEEE Journal of Quantum Electronics

Volumn 41, Issue 3, 2005, Pages 337-343

  Mu, Xiaodong ^a   Ding, Yujie J ^a   Wang, Zhiming ^b   Salamo, Gregory J ^b  

^a Lehigh University   (United States)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

Charge carrier processes; Phonons; Scattering; Semiconductor superlattices

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; ELECTRON RESONANCE; ELECTRON SCATTERING; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; OPTICAL PUMPING; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

CHARGE CARRIER PROCESSES; OPTICAL PHONONS; PHONON ASSISTED RESONANT; PHOTOLUMINESCENCE INTENSITY; PUMP ELECTRONS; PUMP POWER;

SEMICONDUCTOR SUPERLATTICES;

EID: 15544390487     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.841613     Document Type: Article

References (22)

1. S. Krylyuk, D. V. Korbutyak, V. G. Litovchenko, R. Hey, H. T. Grahn, and K. H. Ploog, "Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness," Appl. Phys. Lett., vol. 74, pp. 2596-2598. 1999.
2. V. G. Litovchenko, D. V. Korbutyak, A. I. Bercha, Yu. V. Kryuchenko, S. G. Krylyuk, H. T. Grahn. R. Hey, and K. H. Ploog, "Observation of stimulated emission in an ultrashort-period nonsymmetric GaAs/AlAs superlattice," Appl. Phys. Lett., vol. 78, pp. 4085-4087, 2001.
3. E. Finkman, M. D. Sturge, and M. C. Tamargo, "X-point excitons in AlAs/ GaAs superlattices," Appl. Phys. Lett., vol. 49, pp. 1299-1301, 1986.
4. F. Minami, K. Hirata, K. Era, T. Yao, and Y. Masumoto, "Localized indirect excitons in a short-period GaAs/AlAs superlattice," Phys. Rev. B, Condens. Matter, vol. 36, pp. 2875-2878. 1987.
5. M.-H. Meynadier, R. E. Nahory, J. M. Worlock, M. C. Tamargo, J. L. de Miguel, and M. D. Sturge, "Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of gamma-X mixing: Phys. Rev. Lett., vol. 60, pp. 1338-1341, 1988.
6. R. Cingolani, L. Baldassarre, M. Ferrara, M. Lugarà, and K. H. Ploog, "Type-I-type-II transition in ultra-short-period GaAs/AlAs superlattices," Phys. Rev. B, Condens. Matter, vol. 40, pp. 6101-6107, 1989.
7. n superlattices," Appl. Phys. Lett., vol. 57, pp. 55-57, 1990.
8. n superlattices with n = 1-15," Phys. Rev. B, Condens. Matter vol. 41, pp. 7593-7601, 1990.
9. V. G. Litovchenko, D. V. Korbutyak, S. Krylyuk, H. T. Grahn, and K. H. Ploog, "Enhancement of electron-phonon interaction in ultrashort-period GaAs/A1As superlattices," Phys. Rev. B, Condens. Matter, vol. 55, pp. 10621-10624, 1997.
10. L. S. Braginsky, M. Yu. Zaharov, A. M. Gilinsky, V. V. Preobrazhenskii. M. A. Putyato, and K. S. Zhuravlev, "Kinetics of exciton photoluminescence in type-II semiconductor superlattices," Phys. Rev. B, Condens. Matter, vol. 63, pp. 195 305-195 315, 2001.
11. K. T. Tsen, K. R. Wald, T. Ruf, P. Y. Yu, and H. Morkoç, "Electronoptical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells," Phys. Rev. Lett., vol. 67, pp. 2557-2560, 1991.
12. G. Sun, R. A. Soref, and J. B. Khurgin, "Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap," Appl. Phys. Lett., vol. 84, pp. 3861-3863, 2004.
13. J. B. Khurgin, I. Vurgaftman, and J. R. Meyer, "Modeling of Q-switched semiconductor lasers based on type-II quantum wells: Increasing the pulse energy and peak power," Appl. Phys. Lett., vol. 80, pp. 2631-2633, 2002.
14. E. Finkeßen, M. Potemski, P. Wyder, L. Viña, and G. Weimann, "Cooling of a semiconductor by luminescence up-conversion," Appl. Phys. Lett., vol. 75, pp. 1258-1260, 1999.
15. X. Mu, Y. J. Ding, Z. Wang, and G. J. Salamo, "Observation of stimulated emission in short-period quasiindirect type-II GaAs/AlAs superlattices," in CLEO/IQEC PhAST Tech. Dig. CD-ROM, Washington, DC, 2004. Paper CFM4.
16. P. Dawson, K. J. Moore, C. T. Foxon, G. W. Hooft, and R. P. M. van Hal, "Photoluminescence decay time studies of type II GaAs/AlAs quantum-well structures," J. Appl. Phys., vol. 65, pp. 3606-3609, 1989.
17. 1-x As double-barrier quantum wells," Phys. Rev. B, Condens. Matter, vol. 55, pp. 2393-2400, 1997.
18. O. Madelung, Ed., Semiconductors - Basic Data, 2nd ed. Berlin, Germany: Springer-Verlag, 1996, p. 105.
19. P. Bhattacharya, Semiconductor Optoelectronic Devices. Englewood Cliffs, NJ: Prentice-Hall, 1994.
20. M. A. Stroscio and M. Dutta, Phonons in Nanostructures. Cambridge, U.K.: Cambridge Univ. Press, 2001.
21. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductor and their alloys," J. Appl. Phys., vol. 89, pp. 5815-5875. 2001.
22. Y. J. Ding, C. L. Guo, S. Li, J. B. Khurgin, K.-K. Law, and J. L. Merz, "Continuous-wave photoluminescence excitation spectra of multiple narrow-stepped quantum wells: Evidence for saturation of interface traps," Appl. Phys. Lett., vol. 60, pp. 154-156, 1992.