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Mikrochimica Acta

Volumn 125, Issue 1, 1997, Pages 313-316

Molecular Ion Implantation in Silicon

(6) Markwitz, Andreas a Baumann, Horst a Michelmann, Rolf W a Meyer, Jörg D a Krimmel, Eberhard F a Bethge, Klaus a

a GOETHE UNIVERSITY (Germany)

Author keywords

Molecular ion implantation; Nitrogen depth profile; Non Rutherford RBS; Resonant nuclear reaction analysis; Silicon nitride layers

Indexed keywords

EID: 1542780538 PISSN: 00263672 EISSN: None Source Type: Journal
DOI: 10.1007/bf01246204 Document Type: Article

Times cited : (1)

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