Depth profile analysis and study of the electronic properties of silicon nitride layers produced by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 113, Issue 1-4, 1996, Pages 223-226

  Markwitz, A ^a   Arps, M ^b   Baumann, H ^a   Krimmel, E F ^a   Bethge, K ^a  

^a GOETHE UNIVERSITY   (Germany)

^b FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON BEAMS; ELECTRONIC PROPERTIES; ION BEAMS; ION IMPLANTATION; NUCLEAR PHYSICS; PROTONS; STOICHIOMETRY; THIN FILMS; VACUUM APPLICATIONS;

CURRENT CONDUCTION MECHANISM; DEPTH PROFILE ANALYSIS; ELECTRON BEAM RAPID THERMAL ANNEALING; INCIDENT PROTON ION BEAM; POOLE-FRENKEL EMISSION; RESONANT NUCLEAR REACTION; STOICHIOMETRIC NITROGEN SILICON RATIO;

SILICON NITRIDE;

EID: 0030166548     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01342-3     Document Type: Article

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