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Journal of Materials Science: Materials in Electronics

Volumn 15, Issue 4, 2004, Pages 231-234

Yttrium-substituted bismuth titanate (Bi4-xYxTi3O12) thin film for use in non-volatile memories

(2) Kang, S W a Rhee, S W a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; FERROELECTRIC THIN FILMS; GOLD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM; POLARIZATION; SILICA; SILICON; TITANIUM DIOXIDE;

BISMUTH TITANATE; DIRECT LIQUID INJECTION METAL ORGANIC CHEMICAL VAPOR DEPOSITION; GOLD ELECTRODE; LEAKAGE CURRENT DENSITY; NONVOLATILE MEMORIES; REMANENT POLARIZATIOIN;

BISMUTH COMPOUNDS;

EID: 1542607413 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/B:JMSE.0000012460.03209.74 Document Type: Article

Times cited : (22)

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