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Volumn 89, Issue 12, 2002, Pages 1268031-1268034

Disproportionation phenomena on free and strained Sn/Ge(111) and Sn/Si(111) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRONIC STRUCTURE; GERMANIUM; MONOLAYERS; PHASE DIAGRAMS; PHASE TRANSITIONS; STRAIN; TIN;

EID: 1542567509     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (36)

References (33)
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    • A. Goldoni et al., Phys. Rev. B 55, 4109 (1997); A. Goldoni and S. Modesti, Phys. Rev. Lett. 79, 3266 (1997); L. Petaccia et al., Phys. Rev. B 64, 193410 (2001).
    • (1997) Phys. Rev. Lett. , vol.79 , pp. 3266
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    • A. Goldoni et al., Phys. Rev. B 55, 4109 (1997); A. Goldoni and S. Modesti, Phys. Rev. Lett. 79, 3266 (1997); L. Petaccia et al., Phys. Rev. B 64, 193410 (2001).
    • (2001) Phys. Rev. B , vol.64 , pp. 193410
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    • edited by E. Bertel and M. Donath (World Scientific, Singapore)
    • E. Tosatti and P.W. Anderson, Jpn. J. Appl. Phys. 2, 381 (1974); E. Tosatti, in Electronic Surface and Interface States on Metallic Systems, edited by E. Bertel and M. Donath (World Scientific, Singapore, 1995), p. 67.
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    • We are indebted to R. Waghmare for this remark
    • We are indebted to R. Waghmare for this remark.
  • 32
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    • note
    • In this kind of dynamical state, as in mixed valence, Sn adatom properties in Sn/Si should appear bimodal for fast probes, and unimodal for slow probes. Preliminary data indicate a single Sn site in photoelectron diffraction at 100 K [S. Modesti (private communication)].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.